Semiconductors
TPN22006NH,LQ Toshiba Semiconductor and Storage Inventory and RFQ Quote
MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC TPN22006NH,LQ Toshiba Semiconductor and Storage TSDSON-8 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TPN22006NH,LQ
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 531000
- Package
- TSDSON-8
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Ch 60V 21A 18W UMOSVIII 710pF 12nC
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: N-Channel
- Package / Case: TSON-Advance-8
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 3.1 mm
- Qg - Gate Charge: 12 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 3.3 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET