Semiconductors
TK3P80E,RQ Toshiba Semiconductor and Storage Inventory and RFQ Quote
800V 3A 4.9Ω@1.5A,10V 80W 4V@300uA 1PCSNChannel DPAK MOSFETs ROHS TK3P80E,RQ Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TK3P80E,RQ
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 599000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
800V 3A 4.9Ω@1.5A,10V 80W 4V@300uA 1PCSNChannel DPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 800V
- Continuous Drain Current (Id): 3A
- Drain Source On Resistance (RDS(on)@Vgs: 4.9Ω@1.5A
- Power Dissipation (Pd): 80W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@300uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 500pF@25V
- Total Gate Charge (Qg@Vgs): 12nC@10V