Semiconductors
TK2P90E,RQ Toshiba Semiconductor and Storage Inventory and RFQ Quote
900V 2A 80W 5.9Ω@1A,10V 4V@200uA 1PCSNChannel DPAK MOSFETs ROHS TK2P90E,RQ Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TK2P90E,RQ
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 594000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
900V 2A 80W 5.9Ω@1A,10V 4V@200uA 1PCSNChannel DPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 900V
- Continuous Drain Current (Id): 2A
- Power Dissipation (Pd): 80W
- Drain Source On Resistance (RDS(on)@Vgs: 5.9Ω@1A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@200uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 500pF@25V
- Total Gate Charge (Qg@Vgs): 12nC@10V