Semiconductors
TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage Inventory and RFQ Quote
MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104 TJ8S06M3L(T6L1,NQ) Toshiba Semiconductor and Storage Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- TJ8S06M3L(T6L1,NQ)
- Brand
- Toshiba Semiconductor and Storage
- Qty
- 517000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch MOS -8A -60V 27W 890pF 0.104
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: P-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Width: 5.5 mm
- Qg - Gate Charge: 19 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 34 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET