Power
STW19NM60N STMicroelectronics Inventory and RFQ Quote
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM) STW19NM60N STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STW19NM60N
- Brand
- STMicroelectronics
- Qty
- 534000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N-Ch 600 V 0.27 Ohm 13 A MDmesh(TM)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 260 mOhms
- Package / Case: TO-247-3
- Vgs th - Gate-Source Threshold Voltage: 3 V
- Qg - Gate Charge: 35 nC
- Vgs - Gate-Source Voltage: 25 V
- Fall Time: 25 ns
- Mounting Style: Through Hole
- Product Category: MOSFET