Semiconductors
STH315N10F7-2 STMicroelectronics Inventory and RFQ Quote
MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package STH315N10F7-2 STMicroelectronics Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STH315N10F7-2
- Brand
- STMicroelectronics
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET Automotive-grade N-channel 100 V, 2.1 mOhm typ., 180 A STripFET F7 Power MOSFET in H2PAK-2 package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 2.3 mOhms
- Package / Case: H2PAK-2
- Vgs th - Gate-Source Threshold Voltage: 3.5 V
- Qg - Gate Charge: 180 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 40 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET