Power
STGWA30H65DFB STMicroelectronics Inventory and RFQ Quote
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package STGWA30H65DFB STMicroelectronics TO-247-3L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STGWA30H65DFB
- Brand
- STMicroelectronics
- Qty
- 584000
- Package
- TO-247-3L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 30 A high speed in a TO-247 long leads package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > IGBT Transistors
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Gate-Emitter Leakage Current: 250 nA
- Collector-Emitter Saturation Voltage: 1.55 V
- Product Category: IGBT Transistors
- Subcategory: IGBTs
- Series: STGWA30H65DFB
- Maximum Operating Temperature: + 175 C
- Brand: STMicroelectronics
- Pd - Power Dissipation: 260 W
- Continuous Collector Current at 25 C: 60 A
- Collector- Emitter Voltage VCEO Max: 650 V