Semiconductors
STB50N65DM6 STMicroelectronics Inventory and RFQ Quote
650V 33A 250W 91mΩ@16.5A,10V 4.75V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS STB50N65DM6 STMicroelectronics D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STB50N65DM6
- Brand
- STMicroelectronics
- Qty
- 595000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
650V 33A 250W 91mΩ@16.5A,10V 4.75V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 650V
- Continuous Drain Current (Id): 33A
- Power Dissipation (Pd): 250W
- Drain Source On Resistance (RDS(on)@Vgs: 91mΩ@16.5A
- Gate Threshold Voltage (Vgs(th)@Id): 4.75V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.3nF@100V
- Total Gate Charge (Qg@Vgs): 52.5nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)