Semiconductors
STB33N60M6 STMicroelectronics Inventory and RFQ Quote
600V 25A 125mΩ@12.5A,10V 190W 4.75V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS STB33N60M6 STMicroelectronics D²PAK / TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- STB33N60M6
- Brand
- STMicroelectronics
- Qty
- 514000
- Package
- D²PAK / TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
600V 25A 125mΩ@12.5A,10V 190W 4.75V@250uA 1PCSNChannel D2PAK(TO-263) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 25A
- Drain Source On Resistance (RDS(on)@Vgs: 125mΩ@12.5A
- Power Dissipation (Pd): 190W
- Gate Threshold Voltage (Vgs(th)@Id): 4.75V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.515nF@100V
- Total Gate Charge (Qg@Vgs): 33.4nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)