Semiconductors
SQS405ENW-T1-GE3 Diodes Incorporated Inventory and RFQ Quote
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified SQS405ENW-T1-GE3 Diodes Incorporated DFN3X3-8 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQS405ENW-T1-GE3
- Brand
- Diodes Incorporated
- Qty
- 546000
- Package
- DFN3X3-8
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P Ch -12Vds 8Vgs AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 12 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 14 mOhms
- Package / Case: PowerPAK-1212-8
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 75 nC
- Vgs - Gate-Source Voltage: 8 V
- Fall Time: 26 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET