Power
SQS401ENW-T1-GE3 Diodes Incorporated Inventory and RFQ Quote
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified SQS401ENW-T1-GE3 Diodes Incorporated PowerPAK1212-8 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQS401ENW-T1-GE3
- Brand
- Diodes Incorporated
- Qty
- 541000
- Package
- PowerPAK1212-8
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET P Ch -40Vds 20Vgs AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 20 mOhms
- Package / Case: PowerPAK-1212-8
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 3.3 mm
- Qg - Gate Charge: 21.2 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 10.2 ns
- Mounting Style: SMD/SMT