Semiconductors
SQM120P10_10M1LGE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET P Ch -100Vds 20Vgs SQM120P10_10M1LGE3 Vishay Siliconix TO-263 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQM120P10_10M1LGE3
- Brand
- Vishay Siliconix
- Qty
- 590000
- Package
- TO-263
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P Ch -100Vds 20Vgs
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 8.1 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 9.65 mm
- Qg - Gate Charge: 190 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 200 ns
- Mounting Style: SMD/SMT