Semiconductors
SQM120N10-3M8_GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET N-Channel 100V AEC-Q101 Qualified SQM120N10-3M8_GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQM120N10-3M8_GE3
- Brand
- Vishay Siliconix
- Qty
- 578000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N-Channel 100V AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 3 mOhms
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Width: 9.65 mm
- Qg - Gate Charge: 190 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 12 ns
- Mounting Style: SMD/SMT