Power
SQJ570EP-T1_GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified SQJ570EP-T1_GE3 Vishay Siliconix PowerPAKSO-8L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQJ570EP-T1_GE3
- Brand
- Vishay Siliconix
- Qty
- 587000
- Package
- PowerPAKSO-8L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET N Ch P Ch 100/-100V AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 100 V
- Transistor Polarity: N-Channel, P-Channel
- Rds On - Drain-Source Resistance: 45 mOhms, 146 mOhms
- Package / Case: PowerPAK-SO-8L-4
- Vgs th - Gate-Source Threshold Voltage: 1.5 V
- Width: 5.13 mm
- Qg - Gate Charge: 9 nC, 12 nC
- Vgs - Gate-Source Voltage: 10 V
- Fall Time: 17 ns, 15 ns
- Mounting Style: SMD/SMT