Semiconductors
SQD10N30-330H_GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified SQD10N30-330H_GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQD10N30-330H_GE3
- Brand
- Vishay Siliconix
- Qty
- 521000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N Ch 300Vds 30Vgs AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 300 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 275 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 3.4 V
- Width: 6.22 mm
- Qg - Gate Charge: 47 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 8 ns
- Mounting Style: SMD/SMT