Semiconductors
SQ2318BES-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
40V 8A 26.3mΩ@4A,10V 3W 2.5V@250uA 1 N-Channel SOT-23(TO-236) MOSFETs ROHS SQ2318BES-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQ2318BES-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 595000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
40V 8A 26.3mΩ@4A,10V 3W 2.5V@250uA 1 N-Channel SOT-23(TO-236) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 40V
- Continuous Drain Current (Id): 8A
- Drain Source On Resistance (RDS(on)@Vgs: 26.3mΩ@4A
- Power Dissipation (Pd): 3W
- Gate Threshold Voltage (Vgs(th)@Id): 2.5V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 500pF@25V
- Total Gate Charge (Qg@Vgs): 9.4nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)