Semiconductors
SQ1922EEH-T1-GE3 Diodes Incorporated Inventory and RFQ Quote
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified SQ1922EEH-T1-GE3 Diodes Incorporated SOT-363 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQ1922EEH-T1-GE3
- Brand
- Diodes Incorporated
- Qty
- 517000
- Package
- SOT-363
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 20V Vds Dual N-Ch AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 350 mOhms
- Package / Case: SC-70-6
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Qg - Gate Charge: 700 pC
- Vgs - Gate-Source Voltage: 12 V
- Fall Time: 6 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET