Semiconductors
SQ1912EH-T1_GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified SQ1912EH-T1_GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQ1912EH-T1_GE3
- Brand
- Vishay Siliconix
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 20V Vds 0.8A Id AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 200 mOhms, 200 mOhms
- Package / Case: SOT-363-6
- Vgs th - Gate-Source Threshold Voltage: 450 mV
- Qg - Gate Charge: 1.15 nC, 1.15 nC
- Vgs - Gate-Source Voltage: 12 V
- Fall Time: 17 ns, 17 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET