Semiconductors
SQ1912AEEH-T1-GE3 Diodes Incorporated Inventory and RFQ Quote
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified SQ1912AEEH-T1-GE3 Diodes Incorporated SC-70 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SQ1912AEEH-T1-GE3
- Brand
- Diodes Incorporated
- Qty
- 509000
- Package
- SC-70
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel
- Rds On - Drain-Source Resistance: 200 mOhms
- Package / Case: SOT-363-6
- Vgs th - Gate-Source Threshold Voltage: 450 mV
- Width: 1.25 mm
- Qg - Gate Charge: 1.25 nC
- Vgs - Gate-Source Voltage: 12 V
- Fall Time: 390 ns
- Mounting Style: SMD/SMT