Semiconductors
SPD08P06PGBTMA1 Infineon Technologies Inventory and RFQ Quote
MOSFET P-Ch -60V -8.8A DPAK-2 SPD08P06PGBTMA1 Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SPD08P06PGBTMA1
- Brand
- Infineon Technologies
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET P-Ch -60V -8.8A DPAK-2
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 60 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 230 mOhms
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Width: 6.22 mm
- Qg - Gate Charge: - 13 nC
- Vgs - Gate-Source Voltage: 20 V
- Part # Aliases: G SP000450534 SPD08P06P SPD8P6PGXT
- Fall Time: 14 ns