Semiconductors
SMSD602-RT1G onsemi Inventory and RFQ Quote
50V 200mW 120@150mA,10V 500mA NPN SC-59 Bipolar (BJT) ROHS SMSD602-RT1G onsemi Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SMSD602-RT1G
- Brand
- onsemi
- Qty
- 547000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
50V 200mW 120@150mA,10V 500mA NPN SC-59 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 120@150mA
- Collector Current (Ic): 500mA
- Transition Frequency (fT): -
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 600mV@300mA
- Transistor Type: NPN
- Operating Temperature: -