Semiconductors
SiSA14BDN-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
30V 5.38mΩ@10A,10V 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS SiSA14BDN-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SiSA14BDN-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 596000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
30V 5.38mΩ@10A,10V 2.2V@250uA 1PCSNChannel PowerPAK1212-8 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 21A
- Drain Source On Resistance (RDS(on)@Vgs: 5.38mΩ@10A
- Power Dissipation (Pd): 3.8W
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 917pF@15V
- Total Gate Charge (Qg@Vgs): 22nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)