Semiconductors
SiSA10BDN-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
N-CHANNEL 30-V (D-S) MOSFET POWE SiSA10BDN-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SiSA10BDN-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 525000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
N-CHANNEL 30-V (D-S) MOSFET POWE
- Source Category
- ["Discrete Semiconductor Products", "Transistors", "FETs, MOSFETs", "Single FETs, MOSFETs"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: Vishay Siliconix
- Series: TrenchFET® Gen IV
- Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 104A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 10A, 10V