Semiconductors
SIL03N10A-TP Infineon Technologies Inventory and RFQ Quote
100V 3A 1.5W 120mΩ@3A,10V 3V@250uA 1 N-Channel SOT-23-6L MOSFETs ROHS SIL03N10A-TP Infineon Technologies Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIL03N10A-TP
- Brand
- Infineon Technologies
- Qty
- 537000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 3A 1.5W 120mΩ@3A,10V 3V@250uA 1 N-Channel SOT-23-6L MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 3A
- Power Dissipation (Pd): 1.5W
- Drain Source On Resistance (RDS(on)@Vgs: 120mΩ@3A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.07nF@50V
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)