Semiconductors
SIHW30N60E-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS SIHW30N60E-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHW30N60E-GE3
- Brand
- Vishay Siliconix
- Qty
- 516000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 2.8 V
- Width: 5.31 mm
- Qg - Gate Charge: 85 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 36 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET