Semiconductors
SIHD6N62E-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 620V Vds 30V Vgs DPAK (TO-252) SIHD6N62E-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHD6N62E-GE3
- Brand
- Vishay Siliconix
- Qty
- 529000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 620V Vds 30V Vgs DPAK (TO-252)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 620 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Qg - Gate Charge: 17 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 16 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Vishay / Siliconix