Semiconductors
SIHD14N60E-BE3 Vishay Siliconix Inventory and RFQ Quote
600V 13A 147W 309mΩ@7A,10V 4V@250uA 1PCSNChannel DPAK MOSFETs ROHS SIHD14N60E-BE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHD14N60E-BE3
- Brand
- Vishay Siliconix
- Qty
- 520000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
600V 13A 147W 309mΩ@7A,10V 4V@250uA 1PCSNChannel DPAK MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 13A
- Power Dissipation (Pd): 147W
- Drain Source On Resistance (RDS(on)@Vgs: 309mΩ@7A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.205nF@100V
- Total Gate Charge (Qg@Vgs): 64nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)