Transistor
SIHB22N60E-E3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 600V Vds 30V Vgs D2PAK (TO-263) SIHB22N60E-E3 Vishay Siliconix Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIHB22N60E-E3
- Brand
- Vishay Siliconix
- Qty
- 589000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: TO-263-3
- Vgs th - Gate-Source Threshold Voltage: 4 V
- Qg - Gate Charge: 57 nC
- Vgs - Gate-Source Voltage: 30 V
- Fall Time: 35 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: Vishay / Siliconix