Semiconductors
SIDR610EP-T1-RE3 Vishay Siliconix Inventory and RFQ Quote
200V 31.9mΩ@10A,10V 4V@250uA 1 N-Channel MOSFETs ROHS SIDR610EP-T1-RE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SIDR610EP-T1-RE3
- Brand
- Vishay Siliconix
- Qty
- 524000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
200V 31.9mΩ@10A,10V 4V@250uA 1 N-Channel MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 8.9A
- Drain Source On Resistance (RDS(on)@Vgs: 31.9mΩ@10A
- Power Dissipation (Pd): 7.5W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 1.38nF@100V
- Total Gate Charge (Qg@Vgs): 38nC@10V
- Operating Temperature: -55℃~+175℃@(Tj)