Semiconductors
Si2319DS-T1-E3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V Si2319DS-T1-E3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- Si2319DS-T1-E3
- Brand
- Vishay Siliconix
- Qty
- 539000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 40V 3.0A 1.25W 82 mohms @ 10V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 40 V
- Transistor Polarity: P-Channel
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 1 V
- Width: 1.6 mm
- Qg - Gate Charge: 17 nC
- Vgs - Gate-Source Voltage: 10 V
- Part # Aliases: SI2319DS-E3
- Fall Time: 25 ns
- Mounting Style: SMD/SMT