Semiconductors
SI2312BDS-T1-GE3 Vishay Siliconix Inventory and RFQ Quote
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V SI2312BDS-T1-GE3 Vishay Siliconix Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SI2312BDS-T1-GE3
- Brand
- Vishay Siliconix
- Qty
- 580000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: N-Channel
- Package / Case: SOT-23-3
- Vgs th - Gate-Source Threshold Voltage: 450 mV
- Width: 1.6 mm
- Qg - Gate Charge: 7.5 nC
- Vgs - Gate-Source Voltage: 4.5 V
- Part # Aliases: SI2312BDS-GE3
- Fall Time: 10 ns
- Mounting Style: SMD/SMT