Power
SCTWA90N65G2V STMicroelectronics Inventory and RFQ Quote
TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS SCTWA90N65G2V STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTWA90N65G2V
- Brand
- STMicroelectronics
- Qty
- 546000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
TO-247 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- Source Category
- (SiC) > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Channel Type: 1 N
- Power Dissipation: 565W
- Continuous Drain Current: 119A
- Drain Source Voltage: 650V