Power
SCTWA50N120 STMicroelectronics Inventory and RFQ Quote
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package SCTWA50N120 STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTWA50N120
- Brand
- STMicroelectronics
- Qty
- 523000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET Silicon carbide Power MOSFET 1200 V, 65 A, 59 mOhm (typ. TJ = 150 C) in an HiP247 long leads package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.2 kV
- Transistor Polarity: N-Channel
- Package / Case: HiP-247-3
- Vgs th - Gate-Source Threshold Voltage: 1.8 V
- Qg - Gate Charge: 122 nC
- Vgs - Gate-Source Voltage: 25 V
- Product Category: MOSFET
- Brand: STMicroelectronics
- Number of Channels: 1 Channel
- Tradename: HiP247â?¢