Power
SCTW90N65G2V STMicroelectronics Inventory and RFQ Quote
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package SCTW90N65G2V STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTW90N65G2V
- Brand
- STMicroelectronics
- Qty
- 553000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an HiP247 package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: HIP247-3
- Vgs th - Gate-Source Threshold Voltage: 1.9 V
- Qg - Gate Charge: 157 nC
- Vgs - Gate-Source Voltage: 10 V to 22 V
- Fall Time: 16 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: STMicroelectronics