Power
SCTW40N120G2V STMicroelectronics Inventory and RFQ Quote
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS SCTW40N120G2V STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTW40N120G2V
- Brand
- STMicroelectronics
- Qty
- 585000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
TO-247-3 Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- Source Category
- (SiC) > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Channel Type: 1 N
- Power Dissipation: 278W
- Continuous Drain Current: 36A
- Drain Source Voltage: 1200V