Power
SCTW35N65G2V STMicroelectronics Inventory and RFQ Quote
SICFET N-CH 650V 45A HIP247 SCTW35N65G2V STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTW35N65G2V
- Brand
- STMicroelectronics
- Qty
- 536000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
SICFET N-CH 650V 45A HIP247
- Source Category
- ["Discrete Semiconductor Products", "Transistors - FETs, MOSFETs - Single"]
- Reference Source
- DigiKey
Key Specifications
- Mfr: STMicroelectronics
- Series: Automotive, AEC-Q101
- Package: Tube
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V, 20V
- Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 20V