Semiconductors
SCTH90N65G2V-7 STMicroelectronics Inventory and RFQ Quote
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package SCTH90N65G2V-7 STMicroelectronics D²PAK / TO-263-7L Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCTH90N65G2V-7
- Brand
- STMicroelectronics
- Qty
- 515000
- Package
- D²PAK / TO-263-7L
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET Silicon carbide Power MOSFET 650 V, 90 A, 22 mOhm (typ. TJ = 150 C) in an H2PAK-7 package
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- New Product: New from this manufacturer.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 650 V
- Transistor Polarity: N-Channel
- Package / Case: H2PAK-7
- Vgs th - Gate-Source Threshold Voltage: 1.9 V
- Qg - Gate Charge: 157 nC
- Vgs - Gate-Source Voltage: 10 V to 22 V
- Fall Time: 16 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET
- Brand: STMicroelectronics