Power
SCT20N120 STMicroelectronics Inventory and RFQ Quote
MOSFET 1200V silicon carbide MOSFET SCT20N120 STMicroelectronics TO-247 Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- SCT20N120
- Brand
- STMicroelectronics
- Qty
- 546000
- Package
- TO-247
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
MOSFET 1200V silicon carbide MOSFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 1.2 kV
- Transistor Polarity: N-Channel
- Package / Case: HiP-247-3
- Vgs th - Gate-Source Threshold Voltage: 2 V
- Qg - Gate Charge: 45 nC
- Vgs - Gate-Source Voltage: 20 V
- Fall Time: 17 ns
- Mounting Style: Through Hole
- Product Category: MOSFET
- Brand: STMicroelectronics