Semiconductors
S9014T CBI Inventory and RFQ Quote
45V 200mW 200@1mA,5V 100mA NPN SOT-523-3 Bipolar (BJT) ROHS S9014T CBI Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- S9014T
- Brand
- CBI
- Qty
- 592000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
45V 200mW 200@1mA,5V 100mA NPN SOT-523-3 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 45V
- Power Dissipation (Pd): 200mW
- DC Current Gain (hFE@Ic: 200@1mA
- Collector Current (Ic): 100mA
- Transition Frequency (fT): 150MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 300mV@100mA
- Transistor Type: NPN
- Operating Temperature: -