Semiconductors
RU6888M Texas Instruments Inventory and RFQ Quote
60V 62A 62.5W 8mΩ@10V,40A 4V@250uA 1PCSNChannel PDFN-8(5.8x4.9) MOSFETs ROHS RU6888M Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RU6888M
- Brand
- Texas Instruments
- Qty
- 518000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
60V 62A 62.5W 8mΩ@10V,40A 4V@250uA 1PCSNChannel PDFN-8(5.8x4.9) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 62A
- Power Dissipation (Pd): 62.5W
- Drain Source On Resistance (RDS(on)@Vgs: 8mΩ@10V
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N