Semiconductors
RU1H35R Texas Instruments Inventory and RFQ Quote
100V 40A 21mΩ@10V,16A 111W 3V@250uA 1 N-Channel TO-220 MOSFETs ROHS RU1H35R Texas Instruments Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RU1H35R
- Brand
- Texas Instruments
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 40A 21mΩ@10V,16A 111W 3V@250uA 1 N-Channel TO-220 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs: 21mΩ@10V
- Power Dissipation (Pd): 111W
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 115pF@25V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 2.1nF@25V
- Total Gate Charge (Qg@Vgs): 44nC@10V
- Operating Temperature: -