Semiconductors
RU1H35L Texas Instruments Inventory and RFQ Quote
100V 40A 25mΩ@10V,16A 97W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS RU1H35L Texas Instruments TO-252 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RU1H35L
- Brand
- Texas Instruments
- Qty
- 510000
- Package
- TO-252
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 40A 25mΩ@10V,16A 97W 4V@250uA 1 N-Channel TO-252-2(DPAK) MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 40A
- Drain Source On Resistance (RDS(on)@Vgs: 25mΩ@10V
- Power Dissipation (Pd): 97W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N