RF & Wireless
RF1S630SM Harris Corporation Inventory and RFQ Quote
200V 6A 400mΩ@5A,10V 75W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS RF1S630SM Harris Corporation RF & Wireless advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- RF1S630SM
- Brand
- Harris Corporation
- Qty
- 536000
- Package
- Date Code
- 25+
- Alternative
- Category
- RF & Wireless
Technical Overview
200V 6A 400mΩ@5A,10V 75W 4V@250uA 1PCSNChannel TO-263AB MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 200V
- Continuous Drain Current (Id): 6A
- Drain Source On Resistance (RDS(on)@Vgs: 400mΩ@5A
- Power Dissipation (Pd): 75W
- Gate Threshold Voltage (Vgs(th)@Id): 4V@250uA
- Type: 1 N
- Input Capacitance (Ciss@Vds): 600pF@25V
- Total Gate Charge (Qg@Vgs): 30nC@10V
- Operating Temperature: -55℃~+150℃@(Tj)