Semiconductors
R6006ANDTL Rohm Semiconductor Inventory and RFQ Quote
MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST R6006ANDTL Rohm Semiconductor Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- R6006ANDTL
- Brand
- Rohm Semiconductor
- Qty
- 508000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET LO CURR HI EFF MOSFT HI BREAKDWN RESIST
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Lifecycle
- NRND: Not recommended for new designs.
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 600 V
- Transistor Polarity: N-Channel
- Package / Case: TO-252-3
- Vgs th - Gate-Source Threshold Voltage: 2.5 V
- Qg - Gate Charge: 15 nC
- Vgs - Gate-Source Voltage: 30 V
- Part # Aliases: R6006AND
- Fall Time: 35 ns
- Mounting Style: SMD/SMT
- Product Category: MOSFET