Semiconductors
PZT5551G-B-AA3-R UTC(Unisonic Tech) Inventory and RFQ Quote
160V 2W 150@10mA,5V 600mA NPN SOT-223-4 Bipolar (BJT) ROHS PZT5551G-B-AA3-R UTC(Unisonic Tech) Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- PZT5551G-B-AA3-R
- Brand
- UTC(Unisonic Tech)
- Qty
- 591000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
160V 2W 150@10mA,5V 600mA NPN SOT-223-4 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 50nA
- Collector-Emitter Breakdown Voltage (Vceo): 160V
- Power Dissipation (Pd): 2W
- DC Current Gain (hFE@Ic: 150@10mA
- Collector Current (Ic): 600mA
- Transition Frequency (fT): 100MHz
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 200mV@50mA
- Transistor Type: NPN
- Operating Temperature: -