Transistor
PJM02N60SA PJSEMI Inventory and RFQ Quote
60V 2A 105mΩ@10V,3A 900mW 2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS PJM02N60SA PJSEMI Transistor advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- PJM02N60SA
- Brand
- PJSEMI
- Qty
- 510000
- Package
- Date Code
- 25+
- Alternative
- Category
- Transistor
Technical Overview
60V 2A 105mΩ@10V,3A 900mW 2V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
- Source Category
- /MOS / > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 2A
- Drain Source On Resistance (RDS(on)@Vgs: 105mΩ@10V
- Power Dissipation (Pd): 900mW
- Gate Threshold Voltage (Vgs(th)@Id): 2V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 26pF@30V
- Type: 1 N
- Input Capacitance (Ciss@Vds): 510pF@30V
- Total Gate Charge (Qg@Vgs): 7.5nC@4.5V
- Operating Temperature: -