Diode
PBSS4160DSH Nexperia USA Inc. Inventory and RFQ Quote
Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor PBSS4160DSH Nexperia USA Inc. Diode advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- PBSS4160DSH
- Brand
- Nexperia USA Inc.
- Qty
- 597000
- Package
- Date Code
- 25+
- Alternative
- Category
- Diode
Technical Overview
Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > Bipolar Transistors - BJT
- Reference Source
- Mouser
Key Specifications
- Transistor Polarity: NPN
- Emitter- Base Voltage VEBO: 5 V
- Package / Case: TSOP-6
- Packaging: ['Cut Tape', 'MouseReel', 'Reel']
- Product Category: Bipolar Transistors - BJT
- Brand: Nexperia
- DC Current Gain hFE Max: 500 at 1 mA, 5 V
- Unit Weight: 0.000705 oz
- Collector- Emitter Voltage VCEO Max: 60 V
- Configuration: Dual