Semiconductors
PBHV8110DH-AU_R1_000A1 Panjit International Inc. Inventory and RFQ Quote
100V 1.4W 140@150mA,2V 1A NPN SOT-89 Bipolar (BJT) ROHS PBHV8110DH-AU_R1_000A1 Panjit International Inc. Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- PBHV8110DH-AU_R1_000A1
- Brand
- Panjit International Inc.
- Qty
- 545000
- Package
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
100V 1.4W 140@150mA,2V 1A NPN SOT-89 Bipolar (BJT) ROHS
- Source Category
- /MOS / > (BJT)
- Reference Source
- LCSC
Key Specifications
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 100V
- Power Dissipation (Pd): 1.4W
- DC Current Gain (hFE@Ic: 140@150mA
- Collector Current (Ic): 1A
- Transition Frequency (fT): 100MHz
- Transistor Type: NPN
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic: 450mV@100mA
- Operating Temperature: -55℃~+150℃@(Tj)