Semiconductors
NVJS4151PT1G onsemi Inventory and RFQ Quote
MOSFET 20V 4.2A 60MOHM PFET NVJS4151PT1G onsemi SOT-363-6 Semiconductors advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NVJS4151PT1G
- Brand
- onsemi
- Qty
- 589000
- Package
- SOT-363-6
- Date Code
- 25+
- Alternative
- Category
- Semiconductors
Technical Overview
MOSFET 20V 4.2A 60MOHM PFET
- Source Category
- Semiconductors > Discrete Semiconductors > Transistors > MOSFET
- Reference Source
- Mouser
Key Specifications
- Vds - Drain-Source Breakdown Voltage: 20 V
- Transistor Polarity: P-Channel
- Rds On - Drain-Source Resistance: 55 mOhms
- Package / Case: SOT-363-6
- Vgs th - Gate-Source Threshold Voltage: 1.2 V
- Qg - Gate Charge: 10 nC
- Vgs - Gate-Source Voltage: 12 V
- Fall Time: 4.2 us
- Mounting Style: SMD/SMT
- Product Category: MOSFET