Power
NVH4L060N090SC1 onsemi Inventory and RFQ Quote
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS NVH4L060N090SC1 onsemi TO-247-4L Power advantage inventory, RFQ quote, BOM sourcing and alternative part support from GalaxyIC.
- Part
- NVH4L060N090SC1
- Brand
- onsemi
- Qty
- 594000
- Package
- TO-247-4L
- Date Code
- 25+
- Alternative
- Category
- Power
Technical Overview
TO-247-4L Silicon Carbide Field Effect Transistor (MOSFET) ROHS
- Source Category
- (SiC) > (MOSFET)
- Reference Source
- LCSC
Key Specifications
- Channel Type: 1 N
- Power Dissipation: 221W
- Continuous Drain Current: 46A
- Drain Source Voltage: 900V